Improved Optical Testing of Semiconductor LEDs (Case 2056) (EA)

Principal Investigator:


Humphrey Maris, PhD, Professor

Department of Physics                               

Brown University

Providence, RI


Brief Description:


There is a significant interest in the development of lighting devices based on light emitting diodes (LEDs) and improved energy efficiency, which is often referred to as the amount of light produced by a device versus the energy input.  Various semiconductor materials continue to be tested in LED systems; however, light generation efficiency has been too low to be useful for practical applications.  Efficiency of light generation in devices is dependent on several parameters including material choice, doping level, dopant choice, geometry of the structure and current passing through the device.  There is a need for continual improvement in energy efficiency and light generation from semiconductor LEDs with a broad range of wavelength capability.  During LED fabrication, all aspects of the process must be precisely monitored and controlled to produce a semiconductor LED that maintains a desired performance and long working life.


The invention is an improved method and apparatus for optical testing of a multi quantum well semiconductor LED, making it possible to non-destructively measure several key parameters of the structure.


Markets are in research and development, communications, and semiconductor LED or laser manufacturing, with applications for measurement of semiconductor structures fabricated for use in LEDs, laser diodes, and high power field effect transistors (FETs), which are used for weak signal amplification - digital or analog - of wireless signals in communications and broadcast receivers.




US patent 9,329,224 is issued (05/03/2016) 

Patent Information:
For Information, Contact:
Margaret Shabashevich,
Manager of Operations
Office of Industry Engagement & Commercial Venturing
Brown University
Humphrey Maris
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